有源封装器件 Active Optical Packaged Device
您当前位置:首页 > 产品中心 > 有源封装器件
https://wisefox2018.oss-accelerate.aliyuncs.com/www.csrayzer.com/uploadfiles/image/20211025/20211025153537716.png
1000μm InGaAS APD探测器

The CR1000AH-1550-30M-39 includes a 1000um InGaAs Avalanche Photodiode with a hybrid preamplifier for the use in high speed, ultra-low light detection, in laser range finding, LIDAR and free space communication.

产品详情资料下载

Features

Built in 1000um InGaAs APD+TIA

High sensitivity≥500kV/W

High bandwidth30Mhz

● Wavelength range:900~1700nm

● Low noise and high reliability

● TO39 package with flat window

Applications

● LIDAR

Laserrange finding

● Free space optical communication (FSO)









技术指标

Absolute Maximum Ratings

Parameter

Unit

Symbol

Rating

Reverse breakdown voltage

V

VR

VBR

Operating temperature

TC

-40+85

Storage temperature

TSTG

-55+100

Maximum optical input power

mW

Pin

100

Module mains voltage

V

Vcc/VEE

±5

Power dissipation

mW

Pw

250

Soldering temperature(time)

-

30010s

Optical/Electrical Characteristics (T=25unless otherwise stated)

Parameter

Symbol

Value

Unit

Test conditions

Min

Typ

Max

Response Spectrum

λ

900~1700

nm


Active Diameter

D


1000


um


Reverse breakdown voltage

VBR

30


70

V


Operating voltage

VR

VR-3

V

M=10

Responsivity

RV

500



kV/W

M=10, 1.55um@τ=100ns

Dynamic range

DY

25



dB

M=10, 1.55um @τ=100ns

-3dB bandwidth

BW


30


Mhz

M=10, 1.55um @τ=100ns

Rise/Fall time

tr



11.6


ns

M=10, 1.55um @τ=100ns

Noise Equivalent Power

NEP


150


fW/√Hz

M=10f=100kHz,=1hz

Output impedance

RO


50


Ω


Output Voltage Swing

VO

0.7



V


Positive Supply Current

ICC



30

mA


Negative Supply Current

IEE



10

mA

50ΩLoad

Temperature coefficient of Vop for constant gain

γ

0.06

0.12

0.16

V/ oC

-45+85℃

Concentricity

D



30

um


■Schematic Block Diagram

■ Block Diagram and Pin description



订货信息