有源封装器件 Active Optical Packaged Device
您当前位置:首页 > 产品中心 > 有源封装器件
200μm InGaAS APD探测器

The CR200AH-1550-70M includes a 200um InGaAs Avalanche Photodiode with a hybrid preamplifier for the use in high speed, ultra-low light detection, in laser range finding, LIDAR and free space communication.

产品详情资料下载

Features

Built in 200um InGaAs APD+TIA

High sensitivity≥500kV/W

High bandwidth70Mhz

● Wavelength range:900~1700nm

● Low noise and high reliability

● TO8 package with flat window

Applications

● LIDAR

Laserrange finding

● Free space optical communication (FSO)


图片待传

技术指标

Absolute Maximum Ratings

Parameter

Unit

Symbol

Rating

Reverse breakdown voltage

V

VR

VBR

Operating temperature

TC

-40+85

Storage temperature

TSTG

-55+100

Maximum optical input power

mW

Pin

100

Module mains voltage

V

Vcc/VEE

±5

Power dissipation

mW

Pw

250

Soldering temperature(time)

-

30010s

Optical/Electrical Characteristics (T=25unless otherwise stated)

Parameter

Symbol

Value

Unit

Test conditions

Min

Typ

Max

Response Spectrum

λ

900~1700

nm


Active Diameter

D


200


um


Reverse breakdown voltage

VBR

30


70

V


Operating voltage

VR

VR-3

V

M=10

Responsivity

RV

500



kV/W

M=10, 1.55um@τ=100ns

Dynamic range

DY

25



dB

M=10, 1.55um @τ=100ns

-3dB bandwidth

BW


70


Mhz

M=10, 1.55um @τ=100ns

Rise/Fall time

tr



5


ns

M=10, 1.55um @τ=100ns

Noise Equivalent Power

NEP


150


fW/√Hz

M=10f=100kHz,=1hz

Output impedance

RO


50


Ω


Output Voltage Swing

VO

0.7



V


Positive Supply Current

ICC



30

mA


Negative Supply Current

IEE



10

mA

50ΩLoad

Temperature coefficient of Vop for constant gain

γ

0.06

0.12

0.16

V/ oC

-45+85℃

Concentricity

D



20

um




■Schematic Block Diagram

图片待传

■ Block Diagram and Pin description


图片待传


Pin description




订货信息